<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">F.González</style></author><author><style face="normal" font="default" size="100%">M. F. Romero</style></author><author><style face="normal" font="default" size="100%">A. Jiménez</style></author><author><style face="normal" font="default" size="100%">J. M. Sánchez</style></author><author><style face="normal" font="default" size="100%">A. F. Braña</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Effects of N2 Plasma Pretreatment on the SiN Passivation of AlGaN/GaN HEMT</style></title><secondary-title><style face="normal" font="default" size="100%">IEEE Electron Device Letters </style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2008</style></year><pub-dates><date><style  face="normal" font="default" size="100%">marzo/2008</style></date></pub-dates></dates><pub-location><style face="normal" font="default" size="100%">EEUU</style></pub-location><volume><style face="normal" font="default" size="100%">29</style></volume><pages><style face="normal" font="default" size="100%">209-211</style></pages><language><style face="normal" font="default" size="100%">English</style></language><issue><style face="normal" font="default" size="100%">3</style></issue></record></records></xml>